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60Co γ射线辐照对肖特基二极管1/f噪声的影响 |
| 资料大小： 201 K |
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| 资料作者： 论文发表… |
| 下载扣点: 0 点 |
| 资料类别： 理工ABC |
| 添加时间： 2008-9-14 8:15:13 |
| 下载次数： 本日： 本月： 总计： |
| 资料添加： 审核:enjiatu 录入:enjiatu |
| 中文摘要： |
| 在肖特基二极管(Schottky barrier diode，SBD)辐照损伤机理和总剂量效应分析的基础上，利用1/f噪声的迁移率涨落和载流子数涨落模型，深入研究辐照损伤对器件1/f噪声的影响. 研究结果表明，辐照诱生新的界面态，改变界面态密度分布，进而调制了肖特基势垒高度，增大表面复合速度是引起器件性能退化主要原因，也是1/f噪声剧烈增加的主要原因. 正因为如此，噪声与器件退化存在相关性，即噪声拟合参数B越大，偏离标准值越多，器件可靠性越差，抗辐照 |
| 英文摘要： |
| Based on the analysis of the mechanism of irradiation damage and total dose effect on Schottky barrier diodes (SBD), using the model of the carrier mobility fluctuation and carrier number fluctuation of 1/f noise, the effect of irradiation damage on 1/f noise of SBD was studied in this paper. The research shows that, the irradiation induced interface states change the distributing of interface state density, and, moreover, modulate the Schottky barrier height and increase the velocity of recombination in the surface, leading to the degradation of device performance as well as the significant increasing of 1/f noise level. So, 1/f noise is closely related to SBD's degradation, namely, the larger the magnitude of 1/f noise and the deviation from standard value, the worse the reliability of device, and it's also an indicator of bad radiation-proof performance, which causes its high failure rate in radiation environment. Thus the 1/f noise acts as a researching tool on the mechanism of irradiation damage of SBD, also provides the theoretical basis for nondestructive irradiation hardness assessment. | |
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